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ECE

ENEE416 Integrated Circuit (IC) Fabrication Laboratory

Course Description: Characterization of wafers and fabrication steps. Oxide growth, lithography, dopant diffusion, and metal deposition and patterning will be discussed in the lectures and carried out in the lab in fabricating NMOS transistor circuits. The transistor characteristics will be measured and related to the fabrication parameters.

Prerequisite(s): ENEE 303

Corequisite(s): None

Course Objectives:

  • Provide students an understanding of how a silicon wafer is turned into an operating integrated circuit
  • Review transistor operation and the IC fabrication steps stressing how processing parameters affect transistor performance
  • Carry out the fabrication steps needed to produce transistors, resistors, and capacitors
  • Test the transistors and other related components that have been fabricated and investigate the effects of processing parameters

Topics Covered:

  • Semiconductor device fundamentals
  • Lithography (resist spinning, contact aligner exposure, and development)
  • Oxide growth
  • Chemical vapor deposition
  • Reactive ion etching
  • Doping and dopant diffusion
  • Metal deposition and patterning
  • Analysis of fabricated devices
  • Silicon bulk and surface micromachining