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ISDRS 2009 Technical Program
The 2009 International Semiconductor Device Research Symposium is currently accepting abstracts, which can be submitted online. The technical program will be posted here after abstracts are accepted and scheduled for presentation.
Information and frequently asked questions about the ISDRS poster session is now available.
Click here to download a printable schedule of the ISDRS sessions.
ISDRS 2009 Technical Session Schedule (as of 11/10/09 - subject to change) |
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| Wednesday December 9, 2009 | |||||
12:00 - 7:00 PM |
Registration - Grand Ballroom Lounge |
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Room |
Colony Ballroom | Banneker | Jimenez | Carroll | |
1:30–3:30 PM |
WP1: Nanoelectronics I: Flash and Resistive Memories |
WP2: Wide Bandgap I: SiC Materials |
WP3: Electronics for Energy and Extreme Environments |
WP4: Biosensors | |
3:45–5:45 PM |
WP5: Nanoelectronics II: FinFETs and nano MOSFETs |
WP6: Wide Bandgap II: SiC Devices |
WP7: High-Frequency Devices | WP8: Sensors | |
6:00–8:30 PM |
Welcome Reception and Poster Session - Grand Ballroom |
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| Thursday December 10, 2009 | |||||
7:30 AM - 5:00 PM |
Registration - Grand Ballroom Lounge |
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9:00–11:30 AM |
Plenary Session - Colony Ballroom Larry Kazmerski , National Renewable Energy Laboratory (NREL) - Solar Photovoltaics Technology Prof. Thomas Jackson , Pennsylvania State University - Advances in thin-film electronics Dr. Mike Fritze , DARPA - Carbon Electronics for RF Applications |
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11:30-1:00 PM |
Lunch -Grand Ballroom |
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Room |
Colony Ballroom | Banneker | Jimenez | Carroll | |
1:00–3:20 PM |
TP1: Nanoelectronics III: Epitaxial Graphene and Other Graphene Preparation Methods |
TP2: Wide Bandgap III: GaN Devices I |
TP3: Oxides and Dielectrics I: Transistors and Dielectric Stacks |
TP4: Modeling & Simulation I: Nanoscale Field Effect Transistors: Current and Future generations |
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3:45–5:45 PM |
TP5: Nanoelectronics IV: Exfoliated Graphene and Carbon Nanotubes |
TP6: SOI Technology and Devices I |
TP7: Reliability and Testing | TP8: Modeling & Simulation II: Physics based models I: Technology Limits and Methodology |
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6:15–9:15 PM |
Symposium Awards Banquet - Grand Ballroom |
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| Friday December 11, 2009 | |||||
Room |
Colony Ballroom | Banneker | Jimenez | Carroll | PG |
8:00–10:00 AM |
FA1: Silicon-Germanium (SiGe) |
FA2: Wide Bandgap IV: GaN Devices II |
FA3: Oxides and Dielectrics II: Resistive Switching |
FA4: Flexible Electronics | FA5: Optics and Optoelectronics |
10:15–12:15 PM |
FA6: Nanoelectronics V: TFETs and Novel Transport/Devices |
FA7: Wide Bandgap V: GaN Materials |
FA8: Testing and Characterization | FA9: Organic Materials and Devices |
FA10: Modeling & Simulation III: Physics based models II |
12:15-1:15 PM |
Lunch (on you own) |
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Room |
Colony Ballroom | Banneker | Jimenez | Carroll | PG |
1:15–3:15 PM |
FP1: Nanoelectronics VI: Semiconductor Nanowires and Nanotubes |
FP2: Wide Bandgap VI: ZnO/Diamond |
FP3: SOI Technology and Devices II |
FP4: Processing Technology | |
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This page was last modified on November 11, 2009 |