2007 International Semiconductor Device Research Symposium (ISDRS)
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Thanks to all who made ISDRS 2009 a success
DC photos

Student Prize Winners Announced

Please join us in congratulating the four student prize winners.

  • Best Poster Award (Devices): Samuel MacNaughton, Dante F. DeMeo, Sameer Sonkusale, and Thomas E. Vandervelde (Tufts University) - Wet Chemistry Based Copper Oxide and Zinc Oxide Nanowire Photovoltaic Cells
  • Best Poster Award (Materials): Cuong Nguyen, Pankaj Shah, Edward Leong, Michael Derenge, and Kenneth Jones (ARL) - Si Implant-Assisted Ohmic Contacts to GaN
  • Best Presentation Award (Devices): Jaehoon Park, Ayse M. Merve, Lei Ma, Matthew T. Veety, Michael P. Morgensen, Douglas W. Barlage, Virginia D. Wheeler, and Mark A. Johnson (North Carolina State University) - Analytical Model of Source Injection for N-type Enhancement Mode GaN-based Schottky Source/Drain MOSFET
  • Best Presentation Award (Materials): Jason T. Ryan and Patrick M. Lenahan, The Pennsylvania State University, Anand Krishnan and Srikanth Krishnan (Penn State and Texas Instruments) - Investigation of SILC via Energy Resolved Spin Dependent Tunneling Spectroscopy

Announcements

  • The deadline for submitting manuscripts for consideration by Solid State Electronics has been extended to December 14, 2009.
  • Schedule of technical sessions is now posted.

Plenary Speakers

We are pleased to announce the ISDRS 2009 Plenary Speakers:

  • Ken Zweibel, George Washington University (GWU)
    The Economics of Photovoltaic Device Technologies (updated)
  • Prof. Thomas Jackson, Pennsylvania State University
    Advances and Challenges in Active Thin Film Electronics
  • Dr. Mike Fritze, DARPA
    Low Energy Electronics: DARPA Portfolio Overview

Symposium Information

The biennial International Semiconductor Device Research Symposium focuses on exploratory research in electronic and photonic materials and devices. Areas such as novel device concepts, processing technologies, advanced modeling, nanotechnology, nanoelectronics, wide band-gap semiconductors, MEMS materials and devices, oxides and dielectrics, magnetic materials and devices, organic and polymer opto-electronic materials and devices, ultra high frequency devices & RF effects, and high power-high temperature devices are included. The Symposium brings together diverse participants in multidisciplinary areas, and provides a forum for extended personal scientific interaction for engineers, scientists, and students working in the field of advanced electronic materials and device technologies.

Extended abstracts from the conference are published online through IEEE Xplore. Presenters may optionally submit a full-length manuscript to be considered for publication in a special issue of Solid State Electronics.

Sponsors

The International Semiconductor Device Research Symposium gratefully acknowledges the financial support provided by the following sponsors:

NSFNISTAROAFOSRNanocenter

 

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University of Maryland This page was last modified on December 16, 2009