2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Conference Information

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of the leading-edge research and development results in the area of process and device simulation. SISPAD is held annually, with the location circulating among Asia, Europe, and the USA. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

The 17th SISPAD conference will be held on September 5-7, 2012.

Location: Sheraton Denver Downtown Hotel, Denver, Colorado, USA.

Abstract Submission Deadline: April 1, 2012.

Paper Topics

Original papers are solicited in the following subject areas:

  1. Electronic Transport in Semiconductor Materials and Devices
  2. Device Modeling and Simulation
  3. Sensors, Biosensors and Electromechanical Systems Simulation
  4. Process and Equipment Modeling and Simulation
  5. Compact Models
  6. Physical-Level Circuit Simulation
  7. New Algorithms for Process and Device Modeling
  8. Simulation of Nano and Quantum Devices
  9. User Interfaces and Visualization
  10. Simulation of Power Devices
  11. Photovoltaics and Other Green Technologies