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Organization
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Speaker(s)
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Topic
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Cree
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Anant Agarwal
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GE
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Steve Arthur and Xingguang (Steve) Zhu
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UMD
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Neil Goldsman and Akin Akturk
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Penn State
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Pat Lenahan
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Auburn
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Sarit Dhar and Yogesh Sharma
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Rutgers
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Yi Xu and Gang Liu; (Len Feldman)
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UMD
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Joshua Taillon; (Lourdes Salamanca-Riba)
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NIST
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Joseph Kopanski; (Charles Cheung)
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Sandia
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David Hughart; (Matt Marinella)
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High Temperature Reliability of 1200 V, 33 A 4H-SiC DMOSFETs
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Vanderbilt
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Xiao Shen; (Sok Pantelides)
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Band tail states at the SiC/SiO2 interface
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Purdue
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Jim Cooper
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Cause of the interface trap time constant dispersion at the SiO2/4H-SiC interface
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Simon Fraser U
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Pat Mooney
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Electron Traps Near SiO2/SiC Interfaces
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AZ State
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Wei-Chieh Kao; (Dieter Schroder)
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Interface Trap Extraction With SiC MOS Capacitors
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Vanderbilt
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Xuan (Cher) Zhang; (Dan Fleetwood)
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SiC MOS radiation effects and oxide stability
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CoolCAD
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Siddharth Potbhare
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ARL
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Aivars Lelis, Ron Green, Dan Habersat
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Modeling and measurement dependence of bias-temperature instability
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