The nanoelectronics laboratory consists of a molecular beam epitaxy system (located in the Laboratory for Physical Sciences) for preparation of silicon-based heterojunctions, an electron-beam lithography system (located in room 1322, A.V. Williams building) for patterning nanometer-scale devices, a scanning tunneling microscope (located in room 1318, A.V. Williams building) for observing these fabricated devices, a cryogenic facility (located in room 1324, A.V. Williams building) with superconducting magnets for variable-temperature magnetotransport studies, and an optical system (located in room 1316, A.V. Williams building) for spectroscopic characterization.

The SEM image below shows a fabricated quantum wire transistor with a ballistic semiconductor quantum wire.