c=capac.

m=mos 

n=npn

main abbreviation

position in palette

row, column

/ CIF

alternate names

Magic color,

pages in Technology Manual - 09/08/96

Purpose

bd

2,2

/ CCD

bccdiffusion

p. 15

buried diffusion for ccd

c

cap

4,6

/ CEL+CCE

capacitor, poly cap, pcap

p. 10

poly2 on poly capacitor

capc

3,6

        n

clc

3,1

collecttorcontact, colcontact,colc, coc

p. 14

npn collector

col

2,1

cwell

5,5

/CWC

linear capacitor option

capacitor well

   m

ec

3,5

electrodecontact, econtact, poly2contact, p2c

p. 6

connect metal 1 to poly2

em

2,5

        n

emc

2,6

emittercontact, emitcontact

p. 14

npn emitter

enfet

5,2

entransistor

p. 9

direct NMOS using poly

epfet

5,8

eptransistor

p. 9

direct PMOS using

poly 2

gc

1,8

glass

1,7

/COG

dark diagonal stripes, p. 15

cuts in overglass

   m

m1

1,1

/CMF

metal1

blue, p. 3

main metal

   m

m2

1,3

/CMS

metal2

purple, p. 3

connect to pads

   m

m2c

1,2

/CVA

via, m2contact, m2cut, v, via1

black waffle, p. 5

connect metal 1 to metal 2

m3

1,5

/CMT

metal3

third metal

m3c

1,4

/CVS

via2

contact for m3

nbd

2,3

nbccdiffusion

p. 15

input output nodes  for ccd

nbdc

2,4

nbccdiffcontact

p. 15

contact for ccd

   m

ndc

3,3

ndcontact, ndiffcut

p. 7

metal1 to ndiffusion  contact

   m

ndiff

4,3

/CAA+CSN

ndiffusion

green, p. 4

NMOS “channel”

ndop

3,9

nfet

4,1

ntransistor

p. 8

direct NMOS

nffet

5,3

nfg, doublentransistor, nfoating-gate, nfloatg, nffet

p. 9

NMOS floating gate

   m

nsc

3,2

nnc, nohmic, nncontact, nsubstratencontact

p. 7, p. 11

metal1 to nsubstratendiff contact;

use with nsd for nsubstrate contact

   m

nsd

4,2

nndiff, nnd, nohmic, nsubstrateendiff

light green stippled holes, p. 4

substrate contact or

guard rings;

use with nsc for nsubstrate contact

   m

nwell

5,4

/CWN

diagonal green stripes, p. 13

 PMOS substrates

open

1,9

   m

pad

1,6

diagonal stripes on metal 1 over metal 2, p. 15

unprotected pad for external  connection

        n

pbase

2,7

/CBA

pb

p. 14

npn transistor base = P in nwell

        n

pbc

2,8

pbasecontact, pbcontact

p. 14

npn base contact

   m

pc

3,4

/CCP

polycontact, pcontact, polycut

p. 6

poly to metal 1 contact

   m

pdc

3,7

/CCA

pdcontact, pdiffcut,

p.7

metal1 to pdiffusion contact

   m

pdiff

4,7

/CAA+CSP

pdiffusion

light brown, p. 4

PMOS “channel”

pdop

5,9

pfet

5,7

ptransistor

p. 8

direct PMOS

pffet

4,9

pfg, doubleptransistor, pfloating-gate, pfloatg, pffet

p. 9

PMOS floating gate

   m

poly

4,4

/CPG

p, polysilicon

red, p. 3

“gates”

c

poly2

4,5

/CEL

e1, p2, electrode

yellow cross, p. 3

“gates” & “capacitors”

poly2 contact - uses CCE - see cap

   m

psc

3,8

ppc, ppcontact, pohmig

p. 7, p. 11

metal1 to psubstratepdiff contact;

use with psd for psubstrate contact

   m

psd

4,8

ppdiff, ppd, pohmic, psugstratepdiff

light brown with stipple holes, p. 4

substrate contact or

guard rings;

use with psc for psubstrate contact

pstop

2,9

   m

pwell

5,6

/CWP

diagonal brown stripes, p. 13

NMOS substrates

wcap

5,1