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Journals

 

22) D. P. Ettisserry, N. Goldsman, A. Akturk, A. J. Lelis, “Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces Journal of Applied Physics 116, 174502-1-7 (2014).  

 


 

21) S. Salemi, N. Goldsman, D. P. Ettisserry, A. Akturk, A. Lelis, “The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface Journal of Applied Physics 113, 053703-1-6 (2013).  

 


 

 

20) A. Akturk, J. M. McGarrity, S. Potbhare, N. Goldsman, “Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs IEEE Transactions on Nuclear Science 59(6), 3258-3264 (2012). 

 


 

 

19) A. Akturk, M. Holloway, S. Potbhare, D. Gundlach, B. Li, N. Goldsman, M. Peckerar, K. P. Cheung, “Compact and distributed modeling of cryogenic bulk mosfet operation IEEE Transactions on Electron Devices 57(6), 1334-1342 (2010). 

 


 

18) A. Akturk, M. Peckerar, K. Eng, J. Hamlet, S. Potbhare, E. Longoria, R. Young, T. Gurrieri, M. S. Carroll, N. Goldsman, “Compact modeling of 0.35mm SOI CMOS technology node for 4K dc operation using Verilog-AMicroelectronic Engineering 87(12), 2518-2524 (2010). 

 


 

17) M. Dandin, A. Akturk, B. Nouri, N. Goldsman, P. Abshire, “Characterization of single-photon avalanche diodes in a 0.5 micrometer standard cmos process. Part 1: perimeter breakdown suppressionIEEE Sensors Journal 10(11), 1682 - 1690 (2010). 

 


 

16) A. Akturk, N. Goldsman, S. Potbhare, A. Lelis, “High field density-functional-theory based monte carlo: 4h-sic impact ionization and velocity saturationJournal of Applied Physics 105, 033703-1-7 (2009). 

 


 

15) Z. Dilli, A. Akturk, N. Goldsman, G. Metze, “Controlled on-chip heat transfer for directed heating and temperature reductionSolid State Electronics 53(6), 590–598 (2009).

 


 

14) A. Akturk, N. Goldsman, “Electron transport and full-band electron-phonon interactions in graphene Journal of Applied Physics 103, 053702-1-8 (2008).____also in Virtual Journal of Nanoscale Science and Technology 17(11) (2008).      


 

13) A. Akturk, N. Goldsman, S. Aslam, J. Sigwarth, F. Herrero, “Comparison of 4h-sic impact ionization models using experiments and self-consistent simulationsJournal of Applied Physics 104, 026101-1-3 (2008). 

 


 

12) S. Potbhare, N. Goldsman, A. Akturk, M. Gurfinkel, A. Lelis, J. Suehle, “Energy and time dependent dynamics of trap occupation in 4h-sic mosfetsIEEE Transactions on Electron Devices 55(8), 2061-2070 (2008). 

 


 

11) A. Akturk, N. Goldsman, “Single-walled zig-zag carbon nanotube steady state transport characteristics,” Special Issue of the Journal of Computational and Theoretical Nanoscience on ‘Semiconductor Device Modeling and Simulation’ 5(6), 1138-1144 (2008).
 


 

10) Z. Dilli, N. Goldsman, M. Peckerar, A. Akturk, G. Metze, “Design and testing of a self-powered 3-d integrated soi cmos systemMicroelectronic Engineering 85(2), 388-394 (2008). 

 


 

9) A. Akturk, N. Goldsman, G. Pennington, A. Wickenden, “Terahertz current oscillations in single-walled zig-zag carbon nanotubesPhysical Review Letters 98, 166803-1-4 (2007).____also in Virtual Journal of Nanoscale Science and Technology 15(17) (2007).      
 


 

8) G. Pennington, N. Goldsman, A. Akturk, A. Wickenden, “Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistorsApplied Physics Letters 90(2), 062110-1-3 (2007).____also in Virtual Journal of Nanoscale Science and Technology 15(7) (2007).   
 


 

7) A. Akturk, N. Goldsman, G. Pennington, A. Wickenden, “Electron transport and velocity oscillations in a carbon nanotubeIEEE Transactions on Nanotechnology 6(4), 469-474 (2007).


 

6) A. Akturk, N. Goldsman, G. Pennington, “Self-consistent ensemble monte carlo simulations show terahertz oscillations in single-walled carbon nanotubesJournal of Applied Physics 102, 073720-1-7 (2007).____also in Virtual Journal of Nanoscale Science and Technology 16(18) (2007).      


 

5) A. Akturk, J. Allnut, Z. Dilli, N. Goldsman, M. Peckerar, “Device modeling at cryogenic temperatures: effects of incomplete ionizationIEEE Transactions on Electron Devices 54(11), 2984-2990 (2007).


 

4) A. Akturk, N. Goldsman, G. Metze, “Self-consistent modeling of heating and mosfet performance in three-dimensional integrated circuitsIEEE Transactions on Electron Devices 52(11), 2395-2403 (2005).
 


 

3) A. Akturk, N. Goldsman, L. Parker, G. Metze, “Mixed-mode temperature modeling of full-chip based on individual non-isothermal device operationsSolid-State Electronics 49(7), 1127–1134 (2005).
 


 

2) A. Akturk, G. Pennington, N. Goldsman, “Quantum modeling and proposed designs of carbon nanotube (cnt) embedded nanoscale mosfetsIEEE Transactions on Electron Devices 52(4), 577-584 (2005).

 


 

1) A. Akturk, N. Goldsman, G. Metze, “Increased cmos inverter switching speed with asymmetrical doping Solid-State Electronics 47(2), 185–192 (2003).
 


 

Patent

 

United States Patent,  7,286,359

M. Khbeis, G. Metze, N. Goldsman, A. Akturk, “Use of thermally conductive vias to extract heat from microelectronic chips and method of manufacturing”, October 23 (2007).

 

Abstract: A cooling device for a microcircuit provides a direct path of thermal extraction from a high heat producing area to a cooler area. A thermal insulation layer is formed on a body having at least one component thereon that generates the high heat producing area. At least one via is formed through an entire thickness of the insulation layer and is in direct communication with the high heat producing area. Heat from the high heat producing area is channeled through each via to the cooler area, which may be ambient atmosphere or a good thermal conductor, such as a heat sink. A thermal conductive material may be deposited within the via and increase the rate of thermal extraction therethrough.

 


 

Conferences

 

64) N. Goldsman, A. Akturk, “Key Issues in the Modeling of SiC Electronic Devices,” Proceedings of Compact Modeling Workshop at the Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (9-11 Sept. 2014).


63) D. Ettisserry, N. Goldsman, A. Akturk, A. J. Lelis, “Effects of Carbon-Related Oxide Defects on the Reliability of 4H-SiC MOSFETs,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (9-11 Sept. 2014).


62) A. Akturk, N. Goldsman, S. Potbhare, “Electro-Thermal Simulation of Silicon Carbide Power Modules,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (9-11 Sept. 2014).


61) A. Akturk, A. C. Ahyi, S. Dhar, S. Bauman, S. Potbhare, N. Goldsman “Design, Fabrication and Characterization of Deep Ultraviolet Silicon Carbide Avalanche Photodiodes,” Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (11-13  Dec. 2013).


60) S. Salemi, D.P. Ettisserry, A. Akturk, N. Goldsman, A. Lelis, “Density Functional and Monte Carlo-based Electron Transport Simulation in 4H-SiC(0001)/SiO2 DMOSFET Transition Region,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (3-5 Sept. 2013).


59) D.P. Ettisserry, S. Salemi, N. Goldsman, S. Potbhare, A. Akturk, A. Lelis, “Identification and Quantification of 4H-SiC (0001)/SiO2 Interface Defects by Combining Density Functional and Device Simulations,” Proceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (3-5 Sept. 2013).


58) N. Goldsman, F. Yesilkoy, S. Potbhare, M. Peckerar, A. Akturk, K. Choi, W. Churaman, N. Dhar, “Micro-Antenna Coupled Nano-MIM Diodes: Modeling, Design,Processing and ApplicationProceedings of AVS 59th Int. Symposium & Exhibition, (28 Oct. - 2 Nov. 2012).


 

57) A. Akturk, S. Potbhare, J. Booz, N. Goldsman, D. Gundlach, R. Nandwana, K. Mayaram, “CoolSPICE: SPICE for Extreme Temperature Range Integrated Circuit Design and ModelingProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (5-7 Sept. 2012).

 


 

56) X. Shao, N. Goldsman, N. Dhar, F. Yesilkoy, A. Akturk, S. Potbhare, M. Peckerar, “Simulation Study of Rectifying Antenna Structure for Infrared Wave Energy Harvesting ApplicationsProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (5-7 Sept. 2012).

 


 

55) S. Salemi, N. Goldsman, A. Akturk, A. Lelis, “Density Functional Theory Based Investigation of Defects and Passivation of 4H-Silicon Carbide/SiO2 InterfacesProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (5-7 Sept. 2012).

 


 

54) A. Akturk, S. Salemi, N. Goldsman, S. Potbhare, A. Lelis, “Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfacesProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 119-122 (8-10 Sept. 2011).

 


 

53) Z. Dilli, A. Akturk, N. Goldsman, M. A. Holloway, J. C. Rodgers, “Nonlinear behavior of electrostatic discharge protection structures under high-power microwave excitation: Modeling and simulationProceedings of IEEE Int. Symposium on Circuits and Systems (ISCAS), 1840-1843 (2011).

 


 

52) S. Salemi, A. Akturk, S. Potbhare, A. Lelis, N. Goldsman, “The effect of different passivations on near interface trap density of 4H-SiC/SiO2 structuresProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (7-9  Dec. 2011).

 


 

51) Z. Dilli, R. Curley, A. Akturk, N. Goldsman, “Statistical vulnerability analysis to study intra-chip coupling of high power microwave signalsProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (7-9  Dec. 2011).

 


 

50) M. Dandin, A. Akturk, A. Vert, S. Soloviev, P. Sandvik, S. Potbhare, N. Goldsman, P. Abshire, K. P. Cheung, “Optoelectronic characterization of 4H-SiC avalanche photodiodes operated in DC and in geiger modeProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (7-9  Dec. 2011).

 


 

49) S. Salemi, A. Akturk, S. Potbhare, A. Lelis, N. Goldsman, “The effects of different silicon carbide — silicon dioxide interface passivations on transition region mobility and transportProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (7-9  Dec. 2011).

 


 

48) A. K. Sood, R. A. Richwine, Y. R. Puri, A. Akturk, N. Goldsman, S. Potbhare, G. Fernandes, C.H. Hsu, J. H. Kim, J. Xu, N. K. Dhar, P. S. Wijewarnasuriya, B. I. Lineberry, “Design and development of carbon nanostructure-based microbolometers for IR imagers and sensorsProc. of the SPIE 7679, 76791Q-76791Q-11 (2010).

 


 

47) S. Potbhare, A. Akturk, N. Goldsman, M. Peckerar, J. M. McGarrity, A. Agarwal, “Modeling and design of high temperature silicon carbide DMOSFET based medium power DC-DC converter Proceedings of Int. Conf. on High Temperature Electronics (HiTEC), (11-13 May 2010).

 


 

46) A. Akturk, M. Holloway, D. Gundlach, S. Potbhare, B. Li, N. Goldsman, M. Peckerar, K. P. Cheung, “Distributed numerical modeling of low temperature MOSFET operation Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (9-11 Dec. 2009).

 


 

45) A. Akturk, S. Potbhare, N. Goldsman, A. Lelis, “Self-consistent thermal and electrical analysis of silicon carbide power DMOSFET heating and cooling Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (9-11 Dec. 2009).

 


 

44) A. Akturk, M. Dandin, N. Goldsman, P. Abshire, “Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (9-11 Dec. 2009).

 


 

43) S. Potbhare, N. Goldsman, A. Akturk, A. Lelis, “Effects of random surface charge distribution on transport in 4H-SiC MOSFETs Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (9-11 Dec. 2009).

 


 

42) A. Akturk, M. Peckerar, M. Dornajafi, N. Goldsman, K. Eng, T. Gurrieri, M. S. Carroll, “Impact ionization and freeze-out model for simulation of low gate bias kink effect in soi-mosfets operating at liquid he temperatureProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 147-150 (9-11 Sept. 2009).

 


 

41) S. Potbhare, A. Akturk, N. Goldsman, A. Lelis, S. Dhar, S.-H. Ryu, A. Agarwal, “Modeling the effect of conduction band density of states on interface trap occupation and its influence on 4h-sic mosfet performanceProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 151-154 (9-11 Sept. 2009).

 


 

40) S. Potbhare, A. Akturk, “Mixed mode modeling and characterization of a 4h-sic power dmosfet based dc-dc power converterProceedings of Int. Conference on Silicon Carbide and Related Materials (ICSCRM), (11-16 Oct. 2009).

____Materials Science Forum vols. 645-648, 1163 (2010).

 


 

39) S. Potbhare, A. Akturk, “Effect of band-edge interface traps and transition region mobility on transport in 4h-sic mosfetsProceedings of Int. Conference on Silicon Carbide and Related Materials (ICSCRM), (11-16 Oct. 2009).

____Materials Science Forum vols. 645-648, 975 (2010).

 


 

38) M. Tadjer, R. Stahlbush, K. Hobart, F. Kub, A. Akturk, S. Haney, B. Hull, “Characterization of 4h-sic schottky and p-n diodes using thermally stimulated currentProceedings of the 51st Electronic Materials Conference EMC), 101 (24-26 June 2009).

 


 

37) A. Akturk, N. Goldsman, H. Pandana, R. Gomez,J. Khan, “Numerical modeling of a deoxyribonucleic acid microassay: carbon nanotube thin film transistorProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 93-96 (9-11 Sept. 2008).

 


 

36) A. Akturk, N. Goldsman, S. Aslam, J. Sigwarth, F. Herrero, “Numerical modeling and design of single photon counter 4h-sic avalanche photodiodesProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 201-204 (9-11 Sept. 2008).

 


 

35) A. Akturk, N. Goldsman, “Unusually strong temperature dependence of graphene electron mobilityProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 173-176 (9-11 Sept. 2008).

 


 

34) S. Potbhare, A. Akturk, N. Goldsman, A. Lelis, “Effects of quantum confinement on interface trap occupation in 4h-sic mosfetsProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 181-184 (9-11 Sept. 2008).

 


 

33) S. Potbhare, N. Goldsman, A. Akturk, A. Lelis, R. Green, “Investigation of on and off state characteristics of 4h-sic dmosfetsProceedings of 7th European Conference on Silicon Carbide and Related Materials (ECSCRM), WeP-62 (7-11 Sept. 2008).

____Materials Science Forum vols. 615-617, 805 (2009).

 


 

32) A. Akturk, N. Goldsman, Z. Dilli, M. Peckerar, “Effects of cryogenic temperatures on small-signal mosfet capacitancesProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (12-14 Dec. 2007).

 


 

31) Z. Dilli, A. Akturk, N. Goldsman, “Controlled localized heating on integrated circuits for cold-ambient temperature applicationsProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (12-14 Dec. 2007).

 


 

30) T. Rusak, A. Akturk, N. Goldsman, “Numerical modeling of nanotube embedded chemicapacitive sensorsProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 1-2 (12-14 Dec. 2007).

 


 

29) A. Akturk, N. Goldsman, G. Pennington, “Modeling carbon nanotube electron-phonon resonances shows terahertz current oscillationsProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 225-228 (25-27 Sept. 2007).

 


 

28) S. Potbhare, N. Goldsman, G. Pennington, A. Akturk, A. Lelis, “Transient characterization of interface traps in 4H-SiC mosfetsProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 177-180 (25-27 Sept. 2007).

 


 

27) A. Akturk, N. Goldsman, G. Pennington, “Terahertz sensors and sources: electron-phonon resonances in carbon nanotubesNanoelectronic Devices for Defense and Security Conference, (18-21 June 2007).

 


 

26) G. Pennington, A. Akturk, N. Goldsman, “Electronic properties of carbon nanotube sensing transistors: scattering from charged absorbentsNanoelectronic Devices for Defense and Security Conference, (18-21 June 2007).

 


 

25) A. Wickenden, B. Nichols, M. Ervin, S. Kilpatrick, A. Akturk, G. Pennington, N. Goldsman, G. Esen, A. Manasson, M. Fuhrer, “Carbon nanotube devices for sensing and communications applications211th Electrochemical Society Meeting H4, 1052 (6-11 May 2007).
 


 

24) G. Pennington, N. Goldsman, A. Akturk, A. Wickenden, “Multisubband boltzmann carrier transport in carbon nanotube transistorsAmerican Physical Society March Meeting, K1.00106 (5-9 March 2007).
 


 

23) N. Goldsman, A. Akturk, “Analysis and design of key phenomena in electronics: nanostructures and devicesProceedings of Int. Society for Optical Eng. (SPIE) Optics East Core Technology Conf. 6370, 63700I (1-4 Oct. 2006).
 


 

22) Ankush Varma, Yaqub Afridi, Akin Akturk, Paul Klein, Allen Hefner, Bruce Jacob, “Modeling MEMS Microhotplate Structures With SystemCProceedings of Int. Conf. on Compilers, Architecture, and Synthesis for Embedded Systems (CASES), 54-64 (23-25 Oct. 2006).

 


 

21) A. Akturk, G. Pennington, N. Goldsman, A. Wickenden, “Quantum electron transport in carbon nanotubes: length dependence and velocity oscillationsProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 31-34 (6-8 Sept. 2006).
 


 

20) A. Akturk, N. Goldsman, Z. Dilli, M. Peckerar, “Device performance and package induced self-heating effects at cryogenic temperaturesProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 240-243 (6-8 Sept. 2006). 

 


 

19) Z. Dilli, N. Goldsman, A. Akturk, G. Metze, “A 3-d time-dependent greens function approach to modeling electromagnetic noise in on-chip interconnect networksProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 337-340 (6-8 Sept. 2006).
 


 

18) A. Akturk, N. Goldsman, G. Metze, “An efficient inclusion of self-heating and quantum effects in soi device simulationsProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 99-100 (7-9 Dec. 2005).
 


 

17) A. Akturk, N. Goldsman, N. Dhar, P. S. Wijewarnasuriya, “Modeling the temperature dependence and optical response of hgcdte diodesProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 70-71 (7-9 Dec. 2005).

 


 

16) G. Pennington, A. Akturk, J. M. McGarrity, N. Goldsman, “Transport properties of wide band gap nanotubesProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 346-347 (7-9 Dec. 2005).

 


 

15) Z. Dilli, N. Goldsman, A. Akturk, “An impulse-response based methodology for modeling complex interconnect networksProceedings of Int. Semiconductor Device Research Symposium (ISDRS), 64-65 (7-9 Dec. 2005).

 


 

14) A. Akturk, G. Pennington, N. Goldsman, “Numerical device analysis of all-around gate carbon nanotube (cnt) embedded field-effect transistors (fets)Proceedings of 16th European Conf. on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, [5.6.11] (Sep. 11-16, 2005).
 


 

13) G. Pennington, A. Akturk, N. Goldsman, “Low-field electronic transport in single-walled semiconducting carbon nanotubesProceedings of 16th European Conf. on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, [15.5.2] (Sep. 11-16, 2005).

 


 

12) A. Akturk, N. Goldsman, G. Metze, “Coupled simulation of device performance and heating of vertically stacked three-dimensional integrated circuitsProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD),  115–118 (1-3 Sept. 2005).

 


 

11) A. Akturk, G. Pennington, N. Goldsman, “Device behavior modeling for carbon nanotube silicon-on-insulator mosfetsProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 51–54 (1-3 Sept. 2005).

 


 

10) G. Pennington, A. Akturk, N. Goldsman, “Low-field transport model for semiconducting carbon nanotubesProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 87–90 (1-3 Sept. 2005).

 


 

9) G. Pennington, A. Akturk, N. Goldsman, “Phonon-limited transport in carbon nanotubes using the monte carlo methodProceedings of Int. Workshop on Computational Electronics (IWCE-10), 51-52 (Oct. 2004).

 


 

8) A. Akturk, G. Pennington, N. Goldsman, “Numerical performance analysis of carbon nanotube (cnt) embedded mosfetsProceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 153–156 (2-4 Sept. 2004). 
 


 

7) A. Akturk, G. Pennington, N. Goldsman, “Temperature dependent mobility model for single-walled zig-zag carbon nanotubes (cnts)Proceedings of 8th Int. Conf. on Nanometer-Scale Science and Technology (NANO-8), 728[1846]–729[1846] (28 June-2 July 2004).
 


 

6) A. Akturk, G. Pennington, N. Goldsman, “Characterisation of nanoscale carbon nanotube (cnt) embedded cmos inverters Proceedings of 8th Int. Conf. on Nanometer-Scale Science and Technology (NANO-8), 769[413]–770[413] (28 June-2 July 2004).
 


 

5) A. Akturk, L. Parker, N. Goldsman, G. Metze, “Mixed-mode simulation of non-isothermal quantum device operation and full-chip heating Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 508–509 (10-12 Dec. 2003).
 


 

4) G. Pennington, A. Akturk, N. Goldsman, “Electron mobility of a semiconducting carbon nanotube Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 412–413 (10-12 Dec. 2003).
 


 

3) A. Akturk, N. Goldsman, G. Metze, “Coupled modeling of time-dependent full-chip heating and quantum non-isothermal device operation Proceedings of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 311–314 (3-5 Sept. 2003).
 


 

2) A. Akturk, G. Pennington, N. Goldsman, “Modeling the enhancement of nanoscale mosfets by embedding carbon nanotubes in the channel Proceedings of Third IEEE Conf. on Nanotechnology (IEEE-NANO) 1, 24-27 vol.2 (12-14 Aug. 2003).
 


 

1) A. Akturk, N. Goldsman, G. Metze, “Faster cmos inverter switching obtained with channel engineered asymmetrical halo implanted mosfets Proceedings of Int. Semiconductor Device Research Symposium (ISDRS), 118–121 (5-7 Dec. 2001).
 


 

 

 

 

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