ENEE697 Semiconductor Devices and Technology

• C.H. Yang contact numbers
• Mon. and Wed. 12:30p.m. to 1:45p.m., room0105 Armory building
• Office hours: Monday 3-4p.m., and Friday 10-11a.m.
• Grading method: Homework/project, 20%; midterm, 40%; and final exam 40%
• March 25-31 Spring break
• Midterm exam.: Monday., April 8, 2002 (Close-book written exam.)
• Final exam.: 8-10a.m., Wednesday, May 22, 2002 (Close-book written exam.)

PROJECTS topics (.pdf) Oral presentation: 8 minutes, plus 2 minutes for questions.

   Homework

1. Bipolar transistor characteristics (.pdf) Solution

2. MOS capacitor and the low frequency CV curve (.pdf) Solution

    Handouts (.ps = PostScript, .pdf = Portable Document Format)

• Bipolar I: Pn junction diodes (.pdf)
• Bipolar II: Pnp bipolar transistor --- current-voltage characteristics (.pdf)  (with several figures in .gif format are listed below)
• PNP transistor current components
• Ebers-Moll model's charge distribution
• Equivalent circuit based on the Ebers-Moll model
• Alternative equivalent circuit from the Ebers-Moll model
• small signal ac equivalent circuit from the Gummel-Poon model
• Definition of the boundaries for the Gummel-Poon model
• Equivalent circuit derived from the Gummel-Poon model
• Distribution of charges within the Gummel-Poon model in the active regime
• Bipolar III: Ebers-Moll model and Gummel-Poon model (.pdf)
• MOS I: MOS capacitor and its CV curves (.pdf)
• MOS II: CV curve at low- and high-frequencies (.pdf)
• MOS III: Equivalent circuit of MOS capacitor (.pdf)
• MOS IV: MOSFET current-voltage characteristics (.pdf)
• MOS V: MOSFET's nonideal behavior (.pdf)
• MOS VI: MOSFET's subthreshold behavior (.pdf)
• Ballistic transport in 1D wires (.pdf)
• Single electron transistor (.pdf)