ENEE 312 Reading List
(sections/topics covered)
Sedra and Smith : 5th edition
Chapter 1 and 2:
review material
Topics covered:
Chapter 3 : Diode
3.1 - the ideal diode
3.2 - diode terminal characteristics (silicon)
3.3 - working models of the diode ----> up
to 3.3.7
(will pick up intermediate sections later)
3.7 - physical operation of the diode
zener diodes (some discussion in section 3.4)
rectifier circuits (some discussion in section 3.5.3)
peak detectors (some discussion in section 3.5.4)
voltage doubler
dc restorer circuit
Chapter 5: (Chapter 4 in 4th edition)
5.1.1 to 5.1.3 - the bipolar junction transistor -
equations of
operation
- simple DC biasing
5.1.4 - Ebers-Moll model (http://www.ieee.org/organizations/history_center/legacies/moll.html)
5.1.5 - Saturation mode
5.1.6 - the PNP transistor
5.2.1 - Circuit symbols and conventions
5.2.3 - Dependence of ic on the collector voltage
(Early Effect)
5.3.1 - Large Signal Operation - The Transfer
Characteristic
5.3.2 - Amplifier Gain
5.3.3 - Graphical Analysis
5.4 - BJT Circuits at DC
5.5 - Biasing in BJT Amplifier circuits
5.6 - small signal models (pi and T) - including the
Early Effect
5.7 - Single-Stage BJT amplifiers (common emitter,
common base, common collector)
5.8 - The BJT internal capacitances and
high-frequency model
Chapter 4: - the MOSFET
4.1 - Device Structure and Physical Operation
4.2.1 to 4.2.4 - Current-Voltage
Characteristics
4.3 - DC biasing
4.4 - The MOSFET as an amplifier
4.5 - Biasing in MOS Amplifier Circuits
4.6 - Small Signal Operation
4.8 - MOSFET internal capacitances and
high-frequency model
Chapter 6: - Single Stage Amplifiers
6.12.1 - Cascode MOS Mirrors
6.12.4 - Wilson MOS Mirror
Chapter 7: - Differential Amplifier
7.1 - The MOS Differential Pair
7.2.1 - Small Signal Operation of the Differential
Pair