3D Drift-Diffusion

Our overall objective is to adapt our existing advanced Drift-Diffusion simulation program to be suitable for modeling very complex 3-D device structures, as well as small circuits. The approach that we have developed is unique in that it uses special iterative and scaling methods that lend themselves to modeling 3-D geometries, as well as transient effects. In addition, in contrast to other techniques, our methods allow for easy implementation on parallel machines.

R. Madabhushi, C. Korman, and I. Mayergoyz, "Three-Dimensional MOSFET Solver Implementing the Fixed Point Iteration Technique," Solid-State Electronics, accepted for publication. G.-C. Tai, C. E. Korman, and I. D. Mayergoyz, "Simulation of the Logic Switching Characteristics of Hot-Carrier-Degraded Ultra-Thin SOI CMOS Inverters." Solid-State Electronics. D. Kerr and I. Mayergoyz, "Recovery of vectoral fields and currents in multidimensional simulation," in Simulation of Semiconductor Devices and Processes, (Wien, New York), pp. 198-201, Springer-Verlag, 1995. D. Kerr and I. Mayergoyz, "3-D device simulation using intelligent solution method control," in Proceedings of the Fourth International Workshop on Computational Electronics, 1995.