LDD (Lightly doped drain) MOSFET

Device Cross-Section illustrating main geometrical features. (gate length = 0.18um)

Doping Profile
		(ldd_doping.ps)

Electric Field Vd=1.8V Vg=1.8V
		(ldd_efield.ps)

Potential Vd=1.8V Vg=1.8V
		(ldd_phi.ps)

Majority Carrier Concentration Vd=1.8V Vg=1.8V
		(ldd_ne.ps)

Current Density Vd=1.8V Vg=1.8V
		(ldd_jn.ps)

IV characteristic in linear and saturation region
		(ldd_iv.ps)