-
Use the device simulator presented in class to
calculate the I-V characteristics of the example
submicron MOSFET. Allow Vds and Vgs to range from
0 to 3 volts.
-
Examine the output at two bias points in detail:
a) Vgs=3, Vds=1; b) Vgs=2 and Vds=3.
From the graphs of carrier concentration, potential,
etc., describe the underlying characteristics of
saturation and the linear region of operation.
-
Experiment with changing the channel length and the
source-drain junction depths to determine how
they affect the I-V characteristics of the devices.
-
Extra credit. Describe how you would combine the MOSFET
simulations with your Monte Carlo and Boltzmann equation
solution to learn more about the device you're simulating.
|