ENEE 601 (697): Semiconductor Devices and
The objective of the course is to give students a
comprehensive understanding of the operation of the fundamental
semiconductor devices which compose most existing integrated circuits.
The course is self-contained so there are no
prerequisites. However, a background in very elementary quantum mechanics,
solid state physics, and electrostatics would be helpful for mastering
Device Electronics for Integrated Circuits, by R.S. Muller and
- Physical Electronics: The theory of solid state physics on
a very elementary level to give the basic information necessary to
understand device physics. The knowledge of electrons, holes, band structure,
and Fermi statistics will be expected.
- PN Junctions: Knowledge of PN junction operation will be
expected. Minority and majority carriers; drift and diffusion current;
Continuity and Poisson equations; Shockley Hall Read, Auger, Surface
recombination; charge neutrality; dielectric relaxation phenomena, space
charge, junction capacitance, and diffusion capacitance.
- Bipolar Junction Transistors I: The principles studied for
PN junctions are applied to understand basic BJT operation; prototype
transistor; forward current; base recombination current; uniform and
nonuniform doping, Ebers-Moll Model; planar BJT structures.
- Bipolar Junction Transistors II: The limitations of simple
analytical BJT models including: the Early effect; Kirk effect; high level
injection; base resistance; base transit time.
- Metal Semiconductor Contacts: Schottky-barrier contacts:
- Metal Oxide System: MOS structure; capacitance; MOS
electronics; oxide and interface charge; charge coupled devices.
- MOS Field-Effect Transistor: Basic theory: MOSFET parameters;
- Optional Special Topics: Quantum confined devices; Silicon
on Insulator; Heterojunction Bipolar Transistors, Hot-electron effects,
HEMT's, Optoelectronic Devices.
- B. Streetman, Solid State Electronic Devices. New Jersey,
Prentice Hall, 1990.
- A. van der Ziel, Solid State Physical Electronic. New
Jersey, Prentice Hall, 1976.
- M. Shur, Physics of Semiconductor Devices. New Jersey,
Prentice Hall, 1990.
- S.M. Sze, Physics of Semiconductor Devices. New York,
John Wiley Sons, 1981.