ENEE 601 (697): Semiconductor Devices and Technology

Course Goals:

The objective of the course is to give students a comprehensive understanding of the operation of the fundamental semiconductor devices which compose most existing integrated circuits.

Course Prerequisite:

The course is self-contained so there are no prerequisites. However, a background in very elementary quantum mechanics, solid state physics, and electrostatics would be helpful for mastering the material.

Present Text:

Device Electronics for Integrated Circuits, by R.S. Muller and T.I. Kamins.

Core Topics:

  • Physical Electronics: The theory of solid state physics on a very elementary level to give the basic information necessary to understand device physics. The knowledge of electrons, holes, band structure, and Fermi statistics will be expected.
  • PN Junctions: Knowledge of PN junction operation will be expected. Minority and majority carriers; drift and diffusion current; Continuity and Poisson equations; Shockley Hall Read, Auger, Surface recombination; charge neutrality; dielectric relaxation phenomena, space charge, junction capacitance, and diffusion capacitance.
  • Bipolar Junction Transistors I: The principles studied for PN junctions are applied to understand basic BJT operation; prototype transistor; forward current; base recombination current; uniform and nonuniform doping, Ebers-Moll Model; planar BJT structures.
  • Bipolar Junction Transistors II: The limitations of simple analytical BJT models including: the Early effect; Kirk effect; high level injection; base resistance; base transit time.
  • Metal Semiconductor Contacts: Schottky-barrier contacts: ohmic contacts.
  • Metal Oxide System: MOS structure; capacitance; MOS electronics; oxide and interface charge; charge coupled devices.
  • MOS Field-Effect Transistor: Basic theory: MOSFET parameters; MOSFET design.
  • Optional Special Topics: Quantum confined devices; Silicon on Insulator; Heterojunction Bipolar Transistors, Hot-electron effects, HEMT's, Optoelectronic Devices.

Additional References:

  1. B. Streetman, Solid State Electronic Devices. New Jersey, Prentice Hall, 1990.
  2. A. van der Ziel, Solid State Physical Electronic. New Jersey, Prentice Hall, 1976.
  3. M. Shur, Physics of Semiconductor Devices. New Jersey, Prentice Hall, 1990.
  4. S.M. Sze, Physics of Semiconductor Devices. New York, John Wiley Sons, 1981.